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INTEGRATED CIRCUITS
NE/SE5539 High frequency operational amplifier
Product data Supersedes data of 2001 Aug 03 File under Integrated Circuits, IC11 Data Handbook 2002 Jan 25
Philips Semiconductors
Philips Semiconductors
Product data
High frequency operational amplifier
NE/SE5539
DESCRIPTION
The NE/SE5539 is a very wide bandwidth, high slew rate, monolithic operational amplifier for use in video amplifiers, RF amplifiers, and extremely high slew rate amplifiers. Emitter-follower inputs provide a true differential input impedance device. Proper external compensation will allow design operation over a wide range of closed-loop gains, both inverting and non-inverting, to meet specific design requirements.
PIN CONFIGURATION
D, N Packages
+ INPUT NC -VSUPPLY NC 1 2 3 4 5 6 7 + - 14 13 12 11 - INPUT NC FREQUENCY COMPENS. NC
FEATURES
* Bandwidth
VOSADJ/ AV ADJ NC GROUND
10 +V 9 8 NC OUTPUT
- Unity gain: 350 MHz - Full power: 48 MHz - GBW: 1.2 GHz at 17 dB
* Slew rate: 600/Vs * AVOL: 52 dB typical * Low noise: 4 nVHz typical
TOP VIEW
SL00570
Figure 1. Pin Configuration
APPLICATIONS
* High speed datacom * Video monitors & TV * Satellite communications * Image processing * RF instrumentation & oscillators * Magnetic storage
ORDERING INFORMATION
DESCRIPTION 14-Pin Plastic Dual In-Line Package (DIP) 14-Pin Plastic Small Outline (SO) package 14-Pin Plastic Dual In-Line Package (DIP) TEMPERATURE RANGE 0 C to +70 C 0 C to +70 C -55 C to +125 C ORDER CODE NE5539N NE5539D SE5539N DWG # SOT27-1 SOT108-1 SOT27-1
ABSOLUTE MAXIMUM RATINGS1
SYMBOL VCC PD(max) Supply voltage Maximum power dissipation; Tamb = 25 C N package D package Operating temperature range NE5539D, NE5539N SE5539N Storage temperature range Max junction temperature Lead soldering temperature (10 sec max) (still-air)2 1.45 0.99 0 to +70 -55 to +125 -65 to +150 +150 +230 W W C C C C C PARAMETER RATING 12 UNITS V
Tamb Tstg Tj Tsld
NOTES: 1. Differential input voltage should not exceed 0.25 V to prevent excessive input bias current and common-mode voltage 2.5 V. These voltage limits may be exceeded if current is limited to less than 10 mA. 2. Derate above 25 C, at the following rates: N package at 11.6 mW/C D package at 7.9 mW/C
2002 Jan 25
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853-0814 27610
Philips Semiconductors
Product data
High frequency operational amplifier
NE/SE5539
EQUIVALENT CIRCUIT
(12) FREQUENCY COMP. (10) +VCC
R18 (-) 14 INVERTING INPUT
R19
R3
R5
R2 (+) 1 NON-INVERTING INPUT R6 Q1 Q2 Q4
Q6
R8 Q5
Q3 Q7 Q8
R20
R21 R1 R4 R9 R10 2.2k
(8) OUTPUT
(7) GRD R13 Q10 R11 Q11 R12 R15 R14 R16 R17 (3) -VCC 5 R7
Q9
SL00571
Figure 2. Equivalent Circuit
2002 Jan 25
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Philips Semiconductors
Product data
High frequency operational amplifier
NE/SE5539
DC ELECTRICAL CHARACTERISTICS
VCC = 8 V, Tamb = 25 C; unless otherwise specified. SYMBOL VOS VOS/T IOS IOS/T IB IB/T CMRR RIN ROUT Common mode rejection ratio Input impedance Output impedance RL = 150 to GND and 470 to -VCC VO OUT Output voltage swing RL = 25 to GND Over temp. RL = 25 to GND Tamb = 25 C ICC CC+ ICC CC- PSRR Positive supply current Negative supply current Power supply rejection ratio +Swing -Swing +Swing -Swing +Swing -Swing +2.3 -1.5 +2.5 -2.0 +3.0 -2.1 +3.1 -2.7 14 14 11 11 300 18 17 15 14 1000 200 47 52 1000 57 11 15 14 18 F = 1 kHz; RS = 100 ; VCM 1.7 V Over temp. 70 70 Input bias current Over temp. Tamb = 25 C Input offset current Over temp. Tamb = 25 C PARAMETER Input offset voltage TEST CONDITIONS VO = 0 V; RS = 100 Over temp. Tamb = 25 C SE5539 MIN TYP 2 2 5 0.1 0.1 0.5 6 5 10 80 80 100 10 +2.3 -1.7 100 10 +2.7 -2.2 70 25 13 5 10 80 20 3 1 0.5 2 MAX 5 3 2.5 5 5 MIN NE5539 TYP MAX UNITS mV V/C A nA/C A nA/C dB k V V V mA mA V/V dB dB dB
VO = 0 V, R1 = ; Over temp. VO = 0 V, R1 = ; Tamb = 25 C VO = 0 V, R1 = ; Over temp. VO = 0 V, R1 = ; Tamb = 25 C VCC = 1 V; Over temp. VCC = 1 V; Tamb = 25 C VO = +2.3 V, -1.7 V; RL = 150 to GND, 470 to -VCC
AVOL
Large signal voltage gain L i l lt i
VO = +2.3 V, -1.7 V; , RL = 2 to GND VO = +2.5 V, -2.0 V; , RL = 2 to GND
Over temp. Tamb = 25 C Over temp. Tamb = 25 C 46 48 53 60 58 47 52 57
2002 Jan 25
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Philips Semiconductors
Product data
High frequency operational amplifier
NE/SE5539
DC ELECTRICAL CHARACTERISTICS
VCC = 6 V, Tamb = 25 C; unless otherwise specified. SYMBOL VOS IOS IB CMRR ICC CC+ ICC CC- PSRR PARAMETER Input offset voltage Input offset current Input bias current Common-mode rejection ratio Positive supply current Negative supply current Power supply rejection ratio VCC = 1 V Over temp temp. Tamb = 25 C VCM = 1.3 V; RS = 100 Over temp. Tamb = 25 C Over temp. Tamb = 25 C Over temp. Tamb = 25 C +Swing -Swing +Swing -Swing +1.4 -1.1 +1.5 -1.4 +2.0 -1.7 +2.0 -1.8 V TEST CONDITIONS Over temp. Tamb = 25 C Over temp. Tamb = 25 C Over temp. Tamb = 25 C 70 SE5539 MIN TYP 2 2 0.1 0.1 5 4 85 11 11 8 8 300 14 13 11 10 1000 MAX 5 3 3 1 20 10 UNITS mV A A dB mA mA V/V
VO OUT
Output voltage swing
RL = 150 to GND and 390 to -VCC
2002 Jan 25
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Philips Semiconductors
Product data
High frequency operational amplifier
NE/SE5539
AC ELECTRICAL CHARACTERISTICS
VCC = 8 V, RL = 150 to GND and 470 to -VCC, unless otherwise specified. SYMBOL BW tS SR tPD PARAMETER Gain bandwidth product Small signal bandwidth Settling time Slew rate Propagation delay Full power response Full power response Input noise voltage Input noise current NOTE: 1. External compensation. TEST CONDITIONS ACL = 7, VO = 0.1 VP-P ACL = 2, RL = 150 ACL = 2, RL = 150 1 1 ACL = 2, RL = 150 1 ACL = 2, RL = 150 1 ACL = 2, RL = 150 1 AV = 7, RL = 150 1 RS = 50 , 1 MHz 1 MHz SE5539 MIN TYP 1200 110 15 600 7 48 20 4 6 MAX MIN NE5539 TYP 1200 110 15 600 7 48 20 4 6 MAX UNITS MHz MHz ns V/s ns MHz MHz nV/Hz pA/Hz
AC ELECTRICAL CHARACTERISTICS
VCC = 6 V, RL = 150 to GND and 390 to -VCC, unless otherwise specified. SYMBOL BW tS SR tPD PARAMETER Gain bandwidth product Small signal bandwidth Settling time Slew rate Propagation delay Full power response NOTE: 1. External compensation. TEST CONDITIONS ACL = 7 ACL = 21 ACL = 21 ACL = 21 ACL = 21 ACL = 21 SE5539 MIN TYP 700 120 23 330 4.5 20 MAX UNITS MHz ns V/s ns MHz
TYPICAL PERFORMANCE CURVES
NE5539 Open-Loop Phase
60 0 50 40 GAIN (dB)
NE5539 Open-Loop Gain
PHASE (DEG)
90
30
180
20 270 10 360 1 MHz 0 1 MHz
10MHz
100MHz
1GHz
10MHz
100MHz
1GHz
FREQUENCY (Hz)
FREQUENCY (Hz)
SL00572
SL00573
Figure 3. NE5539 Open-Loop Phase
Figure 4. NE5539 Open-Loop Gain
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Philips Semiconductors
Product data
High frequency operational amplifier
NE/SE5539
TYPICAL PERFORMANCE CURVES (Continued)
Power Bandwidth (SE)
4 5 3 p-p OUTPUT (V) 4 3dB B.W 3 GAIN (--2) VCC = +8V RL = 2k p-p OUTPUT (V) 3dB B.W. 2 VCC = +6V RL = 150k GAIN (--2)
Power Bandwidth (NE)
1
2
0 1 MHz 10MHz FREQUENCY (Hz) 100MHz 300Mhz 10MHz FREQUENCY (Hz) 100MHz 300Mhz
1 1 MHz
SE5539 Open-Loop Gain vs Frequency
REF 3.04V P-P dB BELOW REF -2 -4 -6 -8 GAIN (-7) RL = 150 -12 10MHz FREQUENCY (Hz) 100MHz 300Mhz 1MHz
Power Bandwidth
50 40 GAIN (dB) 30 20 10 0o 1 MHz VCC = +6V RL = 126
-10
10MHz FREQUENCY (Hz)
100MHz
300MHz
SE5539 Open-Loop Phase vs Frequency
Gain Bandwidth Product vs Frequency
0 PHASE (DEG) GAIN (dB) 45 90 VCC = 6V RL = 126 10MHz FREQUENCY (Hz) 100MHz 300MHz
22 20 18 16
AV = X10
VCC = 6V RL = 150
AV = X7.5
3dB BANDWIDTH
135 180 1MHz
3dB BANDWIDTH 14 12 1MHz 10MHz FREQUENCY (Hz) 100MHz 300MHz
NOTE: Indicates typical distribution -55C Tamb 125C
SL00574
Figure 5. Typical Performance Curves
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Philips Semiconductors
Product data
High frequency operational amplifier
NE/SE5539
CIRCUIT LAYOUT CONSIDERATIONS
As may be expected for an ultra-high frequency, wide-gain bandwidth amplifier, the physical circuit is extremely critical.
Bread-boarding is not recommended. A double-sided copper-clad printed circuit board will result in more favorable system operation. An example utilizing a 28 dB non-inverting amp is shown in Figure 6.
OPTIONAL OFFSET ADJ. +V R5 R4 R1 -V
RF
+V
1nF
RFC -14 NE5539 10 8 73 +1
1nF
R3 75 470 R6 VOUT
75
TERM
75
VIN R2
1nF RFC
75 1nF --V
R1 = 75 5% CARBON R2 = 75 5% CARBON R3 = 75 5% CARBON R4 = 36K 5% CARBON
R5 = 20k TRIMPOT (CERMET) RF = 1.5k (28dB GAIN) R6 = 470 5% CARBON
RFC 3T # 26 BUSS WIRE ON FERROXCUBE VK 200 09/3B CORE BYPASS CAPACITORS 1nF CERAMIC (MEPCO OR EQUIV.)
Top Plane Copper1 (Component Side)
Component Side (Component Layout)
Bottom Plane Copper1
--V
X R2
R5 R4
X R1
+V X
RFC
(1) VIN X X X X XR 6 X X XX RF CC RFC
R5
SL00575
Figure 6. 28dB Non-Inverting Amp Sample PC Layout
2002 Jan 25
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Philips Semiconductors
Product data
High frequency operational amplifier
NE/SE5539
NE5539 COLOR VIDEO AMPLIFIER
The NE5539 wideband operational amplifier is easily adapted for use as a color video amplifier. A typical circuit is shown in Figure 7 along with vector-scope1 photographs showing the amplifier differential gain and phase response to a standard five-step modulated staircase linearity signal (Figures 8, 9 and 10). As can be seen in Figure 9, the gain varies less than 0.5% from the bottom to the top of the staircase. The maximum differential phase shown in Figure 10 is approximately +0.1. The amplifier circuit was optimized for a 75 input and output termination impedance with a gain of approximately 10 (20 dB). NOTE: 1. The input signal was 200 mV and the output 2 V. VCC was 8 V.
750 75 --V
22nF -- 14 10 8 VIN + 75 --V 22nF --V 1 7 470 3 75
1
6dB LOSS--1
ZO = 75 75
SL00578
Figure 9. Differential Gain <0.5% NOTE: Instruments used for these measurements were Tektronix 146 NTSC test signal generator, 520A NTSC vectorscope, and 1480 waveform monitor.
SL00576
Figure 7. NE5539 Video Amplifier
SL00577
Figure 8. Input Signal
2002 Jan 25
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Philips Semiconductors
Product data
High frequency operational amplifier
NE/SE5539
SL00579
Figure 10. Differential Gain
+0.1o
+2V -8V 1 820 220 14 1K - 2K CLEAD 1.5pF 2-10pF NE5539 + 470 8 87 118 ZO = 50
ZIN = 500
SL00580
Figure 11. Non-Inverting Follower
+8V -8V 1 320 1K 2-20pF 14 50 - 1K + NE5539
470 118 8 87
3.3pF
SL00581
Figure 12. Inverting Follower
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Philips Semiconductors
Product data
High frequency operational amplifier
NE/SE5539
DIP14: plastic dual in-line package; 14 leads (300 mil)
SOT27-1
2002 Jan 25
11
Philips Semiconductors
Product data
High frequency operational amplifier
NE/SE5539
SO14: plastic small outline package; 14 leads; body width 3.9 mm
SOT108-1
2002 Jan 25
12
Philips Semiconductors
Product data
High frequency operational amplifier
NE/SE5539
NOTES
2002 Jan 25
13
Philips Semiconductors
Product data
High frequency operational amplifier
NE/SE5539
Data sheet status
Data sheet status [1] Objective data Preliminary data Product status [2] Development Qualification Definitions This data sheet contains data from the objective specification for product development. Philips Semiconductors reserves the right to change the specification in any manner without notice. This data sheet contains data from the preliminary specification. Supplementary data will be published at a later date. Philips Semiconductors reserves the right to change the specification without notice, in order to improve the design and supply the best possible product. This data sheet contains data from the product specification. Philips Semiconductors reserves the right to make changes at any time in order to improve the design, manufacturing and supply. Changes will be communicated according to the Customer Product/Process Change Notification (CPCN) procedure SNW-SQ-650A.
Product data
Production
[1] Please consult the most recently issued data sheet before initiating or completing a design. [2] The product status of the device(s) described in this data sheet may have changed since this data sheet was published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com.
Definitions
Short-form specification -- The data in a short-form specification is extracted from a full data sheet with the same type number and title. For detailed information see the relevant data sheet or data handbook. Limiting values definition -- Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 60134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information -- Applications that are described herein for any of these products are for illustrative purposes only. Philips Semiconductors make no representation or warranty that such applications will be suitable for the specified use without further testing or modification.
Disclaimers
Life support -- These products are not designed for use in life support appliances, devices or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips Semiconductors customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips Semiconductors for any damages resulting from such application. Right to make changes -- Philips Semiconductors reserves the right to make changes, without notice, in the products, including circuits, standard cells, and/or software, described or contained herein in order to improve design and/or performance. Philips Semiconductors assumes no responsibility or liability for the use of any of these products, conveys no license or title under any patent, copyright, or mask work right to these products, and makes no representations or warranties that these products are free from patent, copyright, or mask work right infringement, unless otherwise specified.
Contact information
For additional information please visit http://www.semiconductors.philips.com. Fax: +31 40 27 24825
(c) Koninklijke Philips Electronics N.V. 2002 All rights reserved. Printed in U.S.A. Date of release: 01-02
For sales offices addresses send e-mail to: sales.addresses@www.semiconductors.philips.com.
Document order number:
9397 750 09382
Philips Semiconductors
2002 Jan 25 14

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